Recently, the 608th Fragrant Hill Scientific Conference led by Suzhou Nano Institute of Chinese Academy of Sciences was held in Suzhou. More than 40 experts and scholars from home and abroad attended the symposium. The theme of this conference was "Heterogeneous Integration and Interface Control of Compound Semiconductor Devices". Li Shushen and Huang Ru, Chinese Academy of Sciences, and Yang Hui, director of Suzhou Institute of Nanotechnology, and Xie Mahai, a professor from Hong Kong University, acted as the executive chairman of the conference.
The application of semiconductors and integrated circuits in various fields of human society is more and more widely used and increasingly important. After more than half a century of development, the silicon device scale and integration of devices have been approaching the limits of the prior art. With the rapid development of silicon integrated circuits, the development and application of group III-V compounds (including gallium arsenide, indium phosphide and gallium nitride) semiconductor materials and devices have become more and more widespread Concern has become another pillar of the semiconductor industry. The combination of silicon semiconductors and compound semiconductors is an inevitable trend in the field of information development in the future. "Heterogeneous integration and interface control are the key common challenges in this area, and the underlying scientific issues lie in the intrinsic properties of the surface / interface, the quantum effects and the manipulation of atoms, etc. Essential knowledge can be realized using the new vacuum interconnect technology Nano-materials and devices in the quantum effect, the table, the interface precise control, to achieve a new type of semiconductor materials and device innovation, "Wang Yongjiang said.
Nano vacuum Internet Integrated Experimental Station is a complete system for material growth, device processing, test analysis. All samples can be accurately, quickly and smoothly transported in ultra-high vacuum environment. "China Science News" reporter learned that at present, Suzhou Institute of nano-CAS is building the world's largest and most complete function, set of materials growth, test analysis, device technology in one nano vacuum interconnection experimental device, will be completed after the development of new A generation of nanoelectronics and devices research has an important role in promoting. At present, the construction of the first phase of nano-vacuum interconnection experimental unit is progressing smoothly. Some of the devices have been interconnected and preliminary research has been made in the aspects of ohmic contact and energy banding engineering database. The ultimate goal is to build a ultra-high vacuum pipe with a total length of about 500 meters, Achieve the interconnection of hundreds of instruments and equipment.
During the meeting, the participating experts also conducted in-depth discussions on the future research on nano-optoelectronic devices, silicon-based compound materials and devices integration research, new 2D materials research and device exploration.
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